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TC4426A TC4427A TC4428A 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS
FEATURES
s s s s s s High Peak Output Current ............................... 1.5A Wide Operating Range .......................... 4.5V to 18V High Capacitive Load Drive Capability ................. 1000 pF in 25 nsec Typ Short Delay Time ................................. 30 nsec Typ Matched Rise, Fall and Delay Times Low Supply Current -- With Logic "1" Input ............................ 1 mA Typ -- With Logic "0" Input ......................... 100 A Typ Low Output Impedance ................................ 7 Typ Latch-Up Protected: Will Withstand 0.5A Reverse Current Input Will Withstand Negative Inputs Up to 5V ESD Protected .................................................... 4 kV Pinout Same as TC426/TC427/TC428
1
GENERAL DESCRIPTION
The TC4426A/4427A/4428A are improved versions of the earlier TC426/427/428 family of buffer/drivers (with which they are pin compatible). They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 4 kV of electrostatic discharge. As MOSFET drivers, the TC4426A/4427A/4428A can easily switch 1000 pF gate capacitances in under 30 ns, and provide low enough impedances in both the ON and OFF states to ensure the MOSFET's intended state will not be affected, even by large transients.
2 3 4 5 6 7
s s s s s
PIN CONFIGURATIONS
NC 1 IN A 2 GND 3 IN B 4 8 NC 7 OUT A NC 1 IN A 2 GND 3 IN B 4 8 NC 7 OUT A NC 1 IN A 2 GND 3 IN B 4 8 NC 7 OUT A
ORDERING INFORMATION
Part No. Package
8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP
Temp. Range
0C to +70C 0C to +70C - 40C to +85C - 40C to +85C - 55C to +125C 0C to +70C 0C to +70C - 40C to +85C - 40C to +85C - 55C to +125C 0C to +70C 0C to +70C - 40C to +85C - 40C to +85C - 55C to +125C
TC4426A
6 VDD 5 OUT B
TC4427A
6 VDD 5 OUT B
TC4428A
6 VDD 5 OUT B
2 2,4 7,5 2,4 7,5 4 INVERTING NC = NO INTERNAL CONNECTION NOTE: SOIC pinout is identical to DIP. NONINVERTING
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TC4426ACOA TC4426ACPA TC4426AEOA TC4426AEPA TC4426AMJA TC4427ACOA TC4427ACPA TC4427AEOA TC4427AEPA TC4427AMJA TC4428ACOA TC4428ACPA TC4428AEOA TC4428AEPA TC4428AMJA
5
DIFFERENTIAL
FUNCTIONAL BLOCK DIAGRAM
INVERTING OUTPUTS 2 mA 300 mV
VDD
OUTPUT
NONINVERTING OUTPUTS
INPUT 4.7V
TC4426A/TC4427A/TC4428A
GND EFFECTIVE INPUT C = 12 pF NOTES: 1. TC4426A has 2 inverting drivers; TC4427A has 2 noninverting drivers. 2. TC4428A has one inverting and one noninverting driver. 3. Ground any unused driver input.
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TC4426A/7A/8A-9 10/21/96
TELCOM SEMICONDUCTOR, INC.
4-251
1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426A TC4427A TC4428A
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +22V Input Voltage, IN A or IN B .. (VDD + 0.3V) to (GND - 5.0V) Maximum Chip Temperature ................................. +150C Storage Temperature Range ................ - 65C to +150C Lead Temperature (Soldering, 10 sec) ................. +300C Package Thermal Resistance CerDIP RJ-A ................................................ 150C/W CerDIP RJ-C .................................................. 50C/W PDIP RJ-A ................................................... 125C/W PDIP RJ-C ..................................................... 42C/W SOIC RJ-A ................................................... 155C/W SOIC RJ-C ..................................................... 45C/W Operating Temperature Range C Version ............................................... 0C to +70C E Version .......................................... - 40C to +85C M Version ....................................... - 55C to +125C Package Power Dissipation (TA 70C) Plastic .............................................................730mW CerDIP ............................................................800mW SOIC ...............................................................470mW
*Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS:
Symbol Input
VIH VIL IIN Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current
Over operating temperature range with 4.5V VDD 18V, unless otherwise specified. Min Typ
2.4 -- -1 - 10 VDD - 0.025 -- -- -- -- -- 0.5
Parameter
Test Conditions
Max
-- -- -- -- -- -- 7 7 8 1.5 --
Unit
-- 0.8 1 10 -- 0.025 9 10 11 -- -- V V A
- 0V VIN VDD
TA = 25C - 40C TA 85C
Output
VOH VOL RO High Output Voltage Low Output Voltage Output Resistance DC Test DC Test VDD = 18V, IO = 10mA V V
TA = 25C 0C TA 70C - 40 TA 85C VDD = 18V
IPK IREV
Peak Output Current VDD = 18V Latch-Up Protection Duty Cycle 2% Withstand Reverse Current t 300sec Rise Time Figure 1
A A
Switching Time (Note 1)
tR TA = 25C 0C TA 70C - 40C TA 85C TA = 25C 0C TA 70C - 40C TA 85C TA = 25C 0C TA 70C - 40C TA 85C TA = 25C 0C TA 70C - 40C TA 85C VDD = 18V -- -- -- -- -- -- -- -- -- -- -- -- -- -- 25 27 29 25 27 29 30 33 35 30 33 35 1.0 0.1 35 40 40 35 40 40 35 40 45 35 40 45 2.0 0.2 nsec
tF
Fall Time
Figure 1
nsec
tD1
Delay Time
Figure 1
nsec
tD2
Delay Time
Figure 1
nsec
Power Supply
IS Power Supply Current VIN = 3V (Both Inputs) VIN = 0V (Both Inputs) mA
NOTE: 1. Switching times are guaranteed by design.
4-252
TELCOM SEMICONDUCTOR, INC.
1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426A TC4427A TC4428A
1
+5V INPUT
90%
2
tR
90%
VDD= 18V
4.7 F 0.1 F
0V
VDD
10% tD1 90%
tF
tD2
OUTPUT
6
INPUT
2
7
0V OUTPUT
10%
10%
3 4
tF
CL = 1000 pF 4 5
+5V INPUT
Inverting Driver
90%
3
0V
VDD
10% 90% 90% tD2 10%
INPUT: 100 kHz, square wave, tRISE = tFALL 10nsec
tD1
OUTPUT 0V 10%
tR
Noninverting Driver
5 6 7
Figure 1. Switching Time Test Circuit
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TELCOM SEMICONDUCTOR, INC.
4-253
1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426A TC4427A TC4428A
TYPICAL CHARACTERISTICS
Rise Time vs. Supply Voltage Temperature = 25C
100
CL= 2200pF
Fall Time vs. Supply Voltage Temperature = 25C
100 80 tF (nsec)
CL= 2200pF
80 tR (nsec) 60 40
CL= 470pF CL= 1500pF CL= 1000pF
CL= 1500pF
60
CL= 1000pF
40 20
CL= 470pF
20 0 5.0
CL= 100pF
CL= 100pF
7.5
10.0 12.5 VDD (Volts)
15.0
17.5
0 5.0
7.5
10.0 12.5 VDD (Volts)
15.0
17.5
110 100 90 80 70 60 50 40 30 20 1 Delay Time (nsec)
Effect of Input Amplitude on Delay VDD = 10V CL = 1000pF
tD1 Delay Time (nsec)
Propagation Delay Time vs. Supply Voltage CL = 1000pF 60
55 50 45 40 35 30 25 20 0 5 10 VDD (Volts) 15 20 tD2 tD1
tD2
2
3
4
5
6
7
8
9
VDD (Volts)
Rise and Fall Times vs. Temperature VDD = 18V CL = 1000pF
28 Delay Time (nsec) 26 Time (nsec) 24 22 20 18 16 14 -100 tR tF -50 0 50 100 150 TEMPERATURE (C) 40 35 30 25
Propagation Delay Time vs.Temperature VDD = 18V CL = 1000pF
tD2 20 15 -100 tD1 -50 0 50 TEMPERATURE (C) 100 150
High-State Output Resistance
30 25 Rds(on)ohms 20 15 10 5 0 0 5 10 VDD (Volts) 15 20 TA = 125C Rds(on)ohms 30 25
Low State Output Resistance
TA = 125C 20 15 10 5 0 0 5 10 VDD (Volts) 15 20 TA = 125C
TA = 125C
4-254
TELCOM SEMICONDUCTOR, INC.
1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426A TC4427A TC4428A
TYPICAL CHARACTERISTICS (Cont.)
Supply Current vs. Frequency VDD = 18v
60 50
CL= 2200pF
1
Supply Current vs. Capacitance Load VDD = 18v
60
2MHz 900MHz
2 3 4 5 6 7
CL= 1500pF
50
I Supply (mA)
I Supply (mA)
40 30 20 10 0 0 500
CL= 1000pF
40
600MHz
CL= 100pF
30 20
200MHz
10 0 1000 1500 2000 2500 0 500 1000 1500 2000 FREQUENCY (KHz)
20MHz
2500
CL (pF) Supply Current vs.Capacitance Load VDD = 12v
80 70 60 50 40 30 20 10 0
900MHz 600MHz 200MHz 20MHz 2MHz
Supply Current vs. Frequency VDD = 12v
80 70 60 50 40 30 20 10 0 0 500 1000 1500 2000 2500 FREQUENCY (KHz)
CL= 1500pF CL= 2200pF
I Supply (mA)
CL= 1000pF CL= 100pF
I Supply (mA)
0
500
1000
1500
2000
2500
CL (pF) Supply Current vs. Capacitance Load VDD = 6v
40
CL= 2200pF
Supply Current vs. Frequency VDD = 6v
40 35 30 25 20 15 10 5 0 0 500 1000 1500 FREQUENCY (KHz)
CL= 1500pF
35
2MHz
I Supply (mA)
I Supply (mA)
30 25 15 10 5 0 0 500 1000 1500 2000
900MHz 600MHz
CL= 1000pF
CL= 100pF
200MHz 20MHz
2000
2500
2500
CL (pF)
Quiescent Supply Current vs. Voltage
TEMPERATURE = 25C 900 800 700 600 500 400 300 200 100 0
Both inputs = 1
Both inputs = 0
0
5
10 VDD (Volts)
15
20
1100 1000 Both inputs = 0 900 800 700 600 500 400 300 200 Both inputs = 0 100 0 -50 -100
Quiescent Supply Current vs. Temperature VDD = 18v
I Quiescent (A)
I Quiescent (A)
50 0 TEMPERATURE = (C)
100
150
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4-255
TELCOM SEMICONDUCTOR, INC.

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